Gan Hemt Modeling and Design for MM and Sub-MM Wave Power Amplifiers. Diego Guerra

Gan Hemt Modeling and Design for MM and Sub-MM Wave Power Amplifiers
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Author: Diego Guerra
Page Count: 224 pages
Published Date: 06 Feb 2012
Publisher: LAP Lambert Academic Publishing
Publication Country: Saarbrucken, Germany
Language: English
ISBN: 9783847325673
File Name: Gan.Hemt.Modeling.and.Design.for.MM.and.Sub-MM.Wave.Power.Amplifiers.pdf
Download Link: Gan Hemt Modeling and Design for MM and Sub-MM Wave Power Amplifiers
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This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.

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